公开(公告)号：US20050141149A1

公开(公告)日：2005-06-30

申请号：US11036959

申请日：2005-01-14

申请人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

发明人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

公开(公告)号：US20050122638A1

公开(公告)日：2005-06-09

申请号：US11036922

申请日：2005-01-14

申请人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

发明人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US20050122637A1

公开(公告)日：2005-06-09

申请号：US11036529

申请日：2005-01-14

申请人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  YouFeng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

发明人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  YouFeng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

公开(公告)号：US20060007605A1

公开(公告)日：2006-01-12

申请号：US10886288

申请日：2004-07-07

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is provided.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 提供了一种制造该装置的方法。

公开(公告)号：US20080112089A1

公开(公告)日：2008-05-15

申请号：US12008151

申请日：2008-01-09

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。

公开(公告)号：US20050168880A1

公开(公告)日：2005-08-04

申请号：US11091281

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US06987651B2

公开(公告)日：2006-01-17

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050168879A1

公开(公告)日：2005-08-04

申请号：US11091099

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型自旋阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US07006337B2

公开(公告)日：2006-02-28

申请号：US11091282

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050248888A1

公开(公告)日：2005-11-10

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。