The present invention relates to a semiconductor memory device having a voltage driving circuit. The semiconductor memory device includes: a core voltage node; a first driving unit having a first controller for comparing a feedback voltage level of the core voltage node with a reference voltage to output a first control signal, and a first pull-up driver for pulling up the core voltage node; a second driving unit having a second controller driven in response to the active signal as an enable signal to compare the feedback voltage level of the core voltage node with the reference voltage to output a second control signal, and a second pull-up driver for pulling up the core voltage node; and a selecting unit for selectively outputting the first control signal and the second control signal in response to the active signal as a select signal, in which the first pull-up driver is driven in response to the first control signal and the second pull-up driver is driven in response to an output signal of the selecting means.