发明申请
- 专利标题： Method for forming a contact in semiconductor device
- 专利标题（中）： 在半导体器件中形成接触的方法
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申请号： US11026288申请日： 2004-12-30
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公开(公告)号： US20050142886A1公开(公告)日： 2005-06-30
- 发明人: Kang Lee , Date Lee , Kee Kim
- 申请人： Kang Lee , Date Lee , Kee Kim
- 专利权人： DongbuAnam Semiconductor Inc.
- 当前专利权人： DongbuAnam Semiconductor Inc.
- 优先权： KR10-2003-0101600 20031231
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/302 ; H01L21/306 ; H01L21/311 ; H01L21/461 ; H01L21/768
摘要：
A method for forming a contact hole in a semiconductor device is disclosed. The method for forming a contact hole in a semiconductor device comprises depositing a nitride layer and an ILD on a substrate including predetermined devices; forming a first photoresist pattern on the ILD and making a via hole by using the first photoresist pattern; performing a first ashing process; forming a second photoresist pattern on the ILD and making a trench using the second photoresist pattern; conducting a PET; performing a second ashing process and etching the predetermined portion of the nitride layer exposed through the via hole; and wet-cleaning the resulting structure. Accordingly, the present disclosure can fabricate a contact hole maximizing the characteristics of a semiconductor device just by performing a Post Etching Treatment after a trench is formed.
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