- 专利标题: Emitter for electron-beam projection lithography system and manufacturing method thereof
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申请号: US11057469申请日: 2005-02-15
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公开(公告)号: US20050145835A1公开(公告)日: 2005-07-07
- 发明人: In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
- 申请人: In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
- 申请人地址: KR Kyungki-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Kyungki-do
- 优先权: KR10-2003-0016288 20030315
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; H01J1/312 ; H01J9/02 ; H01J37/06 ; H01J37/073 ; H01J37/305 ; H01L21/027 ; H01L29/06 ; H01L21/00
摘要:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
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