- 专利标题： SOI MOSFET with multi-sided source/drain silicide
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申请号： US10749273申请日： 2003-12-29
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公开(公告)号： US20050145938A1公开(公告)日： 2005-07-07
- 发明人: Chun-Chieh Lin
- 申请人： Chun-Chieh Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L21/02 ; H01L21/336 ; H01L21/768 ; H01L23/522 ; H01L27/12 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; H01L21/425
摘要：
A microelectronic device including an insulator located over a substrate, a semiconductor feature and a contact layer. The semiconductor feature has a thickness over the insulator, a first surface opposite the insulator, and a sidewall spanning at least a portion of the thickness. The contact layer has a first member extending over at least a portion of the first surface and a second member spanning at least a portion of the sidewall.
公开/授权文献
- US06963114B2 SOI MOSFET with multi-sided source/drain silicide 公开/授权日：2005-11-08
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