A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.