发明申请
- 专利标题： Deposition chamber and method for depositing low dielectric constant films
- 专利标题（中）： 沉积室和沉积低介电常数膜的方法
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申请号： US10997311申请日： 2004-11-23
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公开(公告)号： US20050150454A1公开(公告)日： 2005-07-14
- 发明人: Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
- 申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C14/34 ; C23C16/40 ; C23C16/455 ; H01L21/205 ; H01L21/31 ; C23C16/00
摘要：
An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.