发明申请
- 专利标题： Etching apparatus and etching method
- 专利标题（中）： 蚀刻装置和蚀刻方法
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申请号： US11032651申请日： 2005-01-10
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公开(公告)号： US20050150861A1公开(公告)日： 2005-07-14
- 发明人: Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
- 申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
- 优先权： JPP2004-005212 20040113; JPP2004-005213 20040113; JPP2004-005218 20040113; JPP2004-005220 20040113
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/3065 ; C23F1/00 ; B01D53/02 ; B01D59/26
摘要：
A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
公开/授权文献
- US08361274B2 Etching apparatus and etching method 公开/授权日：2013-01-29
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