利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.014 秒)

    Etching method
    3.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    ION IMPLANTER WITH ETCH PREVENTION MEMBER(S)
    4.
    发明申请
    ION IMPLANTER WITH ETCH PREVENTION MEMBER(S) 有权
    离子植入物与防腐剂成员（S）

    公开(公告)号：US20080054194A1

    公开(公告)日：2008-03-06

    申请号：US11845187

    申请日：2007-08-27

    申请人： Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

    发明人： Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

    IPC分类号： H01J37/08

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

    摘要： An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

    摘要翻译： 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。

    Etching method
    5.
    发明申请
    Etching method 有权
    蚀刻方法

    公开(公告)号：US20050153553A1

    公开(公告)日：2005-07-14

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Ion implanter with etch prevention member(s)
    6.
    发明授权
    Ion implanter with etch prevention member(s) 有权
    具有防蚀蚀部件的离子注入机

    公开(公告)号：US07560712B2

    公开(公告)日：2009-07-14

    申请号：US11845187

    申请日：2007-08-27

    申请人： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

    发明人： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

    IPC分类号： H01J37/317 ,  H01J37/305

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

    摘要： An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

    摘要翻译： 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。