发明申请
US20050151178A1 Buried collar trench capacitor formed by LOCOS using self starved ALD nitride as an oxidation mask
失效
由LOCOS使用自匮乏的ALD氮化物作为氧化掩模形成的埋入式沟槽电容器
- 专利标题： Buried collar trench capacitor formed by LOCOS using self starved ALD nitride as an oxidation mask
- 专利标题（中）： 由LOCOS使用自匮乏的ALD氮化物作为氧化掩模形成的埋入式沟槽电容器
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申请号： US10749771申请日： 2003-12-30
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公开(公告)号： US20050151178A1公开(公告)日： 2005-07-14
- 发明人: James Shyu , Hsi-Chieh Chen , Chuan-Chi Chen
- 申请人： James Shyu , Hsi-Chieh Chen , Chuan-Chi Chen
- 专利权人： ProMOS Technologies, Inc.
- 当前专利权人： ProMOS Technologies, Inc.
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/318 ; H01L21/32 ; H01L21/8242 ; H01L29/94
摘要：
A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.
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