公开(公告)号：US20050151178A1

公开(公告)日：2005-07-14

申请号：US10749771

申请日：2003-12-30

申请人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

发明人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/32 ,  H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/10829 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/32 ,  H01L27/10867 ,  H01L29/945

摘要： A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

摘要翻译： 一种制造沟槽电容器的方法，包括限定半导体衬底，在半导体衬底中形成具有下部区域和上部区域的沟槽，在下部区域周围形成掩埋导电区域，沿着沟槽的侧壁形成第一绝缘层 直到下部区域和上部区域之间的水平面，在上部区域沿着沟槽的侧壁形成第二绝缘层，第二绝缘层通过中间区域与第一绝缘层分离，并且形成氧化物 在中间区域的沟槽的侧壁。

公开(公告)号：US06995451B2

公开(公告)日：2006-02-07

申请号：US10749771

申请日：2003-12-30

申请人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

发明人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： H01L27/10829 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/32 ,  H01L27/10867 ,  H01L29/945

摘要： A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

摘要翻译： 一种制造沟槽电容器的方法，包括限定半导体衬底，在半导体衬底中形成具有下部区域和上部区域的沟槽，在下部区域周围形成掩埋导电区域，沿着沟槽的侧壁形成第一绝缘层 直到下部区域和上部区域之间的水平面，在上部区域沿着沟槽的侧壁形成第二绝缘层，第二绝缘层通过中间区域与第一绝缘层分离，并形成氧化物 在中间区域的沟槽的侧壁。

公开(公告)号：US20050079680A1

公开(公告)日：2005-04-14

申请号：US10962473

申请日：2004-10-13

申请人： Hsi-Chieh Chen ,  James Shyu ,  Hippo Wu

发明人： Hsi-Chieh Chen ,  James Shyu ,  Hippo Wu

IPC分类号： H01L21/20 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/1087 ,  H01L27/10829 ,  H01L29/66181

摘要： A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.

摘要翻译： 公开了一种形成沟槽电容器的方法。 在电容器的底部电极完成之后，使用自匮乏的原子层化学气相沉积（自我饥饿的ALCVD）直接在深沟槽的侧壁上形成环形电介质层。 然后，使用原子层化学气相沉积（ALCVD），在轴环电介质和深沟槽的底部上形成高介电常数（高k）电介质层。 此后，将导电层填充到深沟槽中并凹进到预定深度。 去除深沟槽顶部的介电层和高介电常数（高k）层的一部分，以完成深沟槽电容器的制造。

公开(公告)号：US07094659B2

公开(公告)日：2006-08-22

申请号：US10962473

申请日：2004-10-13

申请人： Hsi-Chieh Chen ,  James Shyu ,  Hippo Wu

发明人： Hsi-Chieh Chen ,  James Shyu ,  Hippo Wu

IPC分类号： H01L21/76

CPC分类号： H01L27/1087 ,  H01L27/10829 ,  H01L29/66181

摘要： A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.

摘要翻译： 公开了一种形成沟槽电容器的方法。 在电容器的底部电极完成之后，使用自匮乏的原子层化学气相沉积（自我饥饿的ALCVD）直接在深沟槽的侧壁上形成环形电介质层。 然后，使用原子层化学气相沉积（ALCVD），在轴环电介质和深沟槽的底部上形成高介电常数（高k）电介质层。 此后，将导电层填充到深沟槽中并凹进到预定深度。 去除深沟槽顶部的介电层和高介电常数（高k）层的一部分，以完成深沟槽电容器的制造。