发明申请
- 专利标题： Semiconductor integrated circuit, semiconductor integrated circuit design system, and a method for designing semiconductor integrated circuits
- 专利标题（中）： 半导体集成电路，半导体集成电路设计系统和半导体集成电路设计方法
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申请号： US10845247申请日： 2004-05-14
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公开(公告)号： US20050156200A1公开(公告)日： 2005-07-21
- 发明人: Koichi Kinoshita
- 申请人： Koichi Kinoshita
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2004-005978 20040113
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L21/82 ; H01L21/822 ; H01L21/8238 ; H01L27/02 ; H01L27/04 ; H01L27/092 ; H01L27/10 ; H01L27/118
摘要：
A semiconductor integrated circuit includes a first cell spanning one of the p-wells and one of the n-wells adjacent to each other, and having one end on a dividing line inside the p-well and another end on a dividing line inside the n-well, and having a height determined by the one end and the another end; and a second cell, spanning another one of the p-wells and another one of the n-wells adjacent to each other, with a height covering the entire widths of the p- and n-wells measured along the column direction, the height of the second cell is double that of the first cell.
公开/授权文献
- US07329938B2 Semiconductor integrated circuit 公开/授权日：2008-02-12
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