发明申请
US20050156208A1 Device having multiple silicide types and a method for its fabrication
审中-公开
具有多种硅化物类型的器件及其制造方法
- 专利标题: Device having multiple silicide types and a method for its fabrication
- 专利标题(中): 具有多种硅化物类型的器件及其制造方法
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申请号: US10955349申请日: 2004-09-30
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公开(公告)号: US20050156208A1公开(公告)日: 2005-07-21
- 发明人: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 申请人: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8238 ; H01L29/78 ; H01L29/76
摘要:
Provided are a semiconductor device and a method for its fabrication. In one example, the semiconductor device includes an active region formed on a substrate using a first silicide type and another active region formed on the substrate using another silicide type. The two silicide types differ and at least one of the two silicides is an alloy silicide. An etch stop layer may overlay at least one of the silicide regions.
公开/授权文献
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