发明申请
- 专利标题： Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
- 专利标题（中）： 磁隧道结膜结构与工艺确定面内磁各向异性
-
申请号： US10761003申请日： 2004-01-20
-
公开(公告)号： US20050157544A1公开(公告)日： 2005-07-21
- 发明人: Tai Min , Cheng Horng , Po Wang
- 申请人： Tai Min , Cheng Horng , Po Wang
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11C11/14 ; G11C11/16 ; H01L21/8246 ; H01L27/22 ; H01L31/062 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要：
A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
公开/授权文献
信息查询
IPC分类:
