- 专利标题: Charge pump circuit and PLL circuit using same
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申请号: US11085559申请日: 2005-03-22
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公开(公告)号: US20050162202A1公开(公告)日: 2005-07-28
- 发明人: Norihito Suzuki
- 申请人: Norihito Suzuki
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 优先权: JPP2002-376520 20021226
- 主分类号: H03L7/093
- IPC分类号: H03L7/093 ; H03L7/089 ; H03L7/095 ; H03K19/086
摘要:
A charge pump circuit able to enhance the rising and falling characteristics of a current output, drive the current output with a short pulse, reduce leakage current at the OFF time when a current is not output, and realize a reduction of a power consumption and a PLL circuit using same. By outputting a charge current or a discharge current in accordance with an up signal or a down signal and turning on a third transistor (PC, NC) at the OFF time when the current is not output, an inverse bias voltage is supplied between a gate and a source of the second transistor (PA, NA), whereby a reduction of the leakage current can be realized. When the second or third transistor is switched in accordance with the up signal or the down signal, the timing of the control signal is appropriately controlled, simultaneous turning on of the second and third transistors can be avoided, release or injection of charges from and to the output terminal of the charge pump circuit can be prevented, and the stability of an oscillation frequency of a VCO can be improved.
公开/授权文献
- US06954092B2 Charge pump circuit and PLL circuit using same 公开/授权日:2005-10-11
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