发明申请
US20050164469A1 Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches
审中-公开
深沟槽中非晶硅和多晶硅电极的N +掺杂方法
- 专利标题： Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches
- 专利标题（中）： 深沟槽中非晶硅和多晶硅电极的N +掺杂方法
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申请号： US10766053申请日： 2004-01-28
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公开(公告)号： US20050164469A1公开(公告)日： 2005-07-28
- 发明人: Moritz Haupt
- 申请人： Moritz Haupt
- 申请人地址： US CA San Jose
- 专利权人： Infineon Technologies North America Corp.
- 当前专利权人： Infineon Technologies North America Corp.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/223 ; H01L21/38 ; H01L21/76 ; H01L21/8242
摘要：
The present invention related to doping of amorphous silicon and polysilicon in trench structures for semiconductor devices. A single gas phase doping step is performed after a thin layer of amorphous silicon or polysilicon is deposited in the trench. The gas phase doping occurs at elevated temperature and moderate pressure to yield a dopant concentration on the order of 1×1020 atoms/cm3.