发明申请
- 专利标题： Thin-film transistor and method of fabricating the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US11078581申请日： 2005-03-14
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公开(公告)号： US20050167673A1公开(公告)日： 2005-08-04
- 发明人: Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Il-Jung Kim , Kazuhito Tsutsumi , Hirotada Kuriyama , Yoshiyuki Ishigaki , Motomu Ukita , Toshiaki Tsutsumi
- 申请人： Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Il-Jung Kim , Kazuhito Tsutsumi , Hirotada Kuriyama , Yoshiyuki Ishigaki , Motomu Ukita , Toshiaki Tsutsumi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP8-306626(P) 19961118
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L27/11 ; H01L27/12 ; H01L29/417 ; H01L29/45 ; H01L29/786 ; H01L29/04
摘要：
Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.
公开/授权文献
- US07187040B2 Thin-film transistor and method of fabricating the same 公开/授权日：2007-03-06
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