- 专利标题： Semiconductor device and its manufacturing method
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申请号： US11068848申请日： 2005-03-02
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公开(公告)号： US20050170582A1公开(公告)日： 2005-08-04
- 发明人: Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
- 申请人： Takeo Furuhata , Ichiro Mizushima , Akiko Sekihara , Motoya Kishida , Tsubasa Harada , Takashi Nakao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002-344959 20021128
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/8234 ; H01L21/8242 ; H01L21/8244 ; H01L27/108 ; H01L31/119
摘要：
A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.
公开/授权文献
- US07126178B2 Semiconductor device and its manufacturing method 公开/授权日：2006-10-24
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