发明申请
- 专利标题： Semiconductor device and, manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10989319申请日： 2004-11-17
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公开(公告)号： US20050170608A1公开(公告)日： 2005-08-04
- 发明人: Masahiro Kiyotoshi , Atsuko Kawasaki , Katsuhiko Hieda
- 申请人： Masahiro Kiyotoshi , Atsuko Kawasaki , Katsuhiko Hieda
- 优先权： JP2003-387657 20031118
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/316 ; H01L21/762 ; H01L21/8242 ; H01L29/78
摘要：
A semiconductor device comprises a semiconductor substrate; a trench formed on the semiconductor substrate; and an isolation region filled in the trench, the isolation region having a lower wet etching rate near the upper edge of said trench than that of the lower portion of said trench, and the wet etching rate of the isolation region being almost uniform on a plane parallel to the surface of the semiconductor substrate.
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