Invention Application
- Patent Title: Semiconductor device and its manufacturing method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11059451Application Date: 2005-02-17
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Publication No.: US20050184328A1Publication Date: 2005-08-25
- Inventor: Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
- Applicant: Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
- Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Current Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Priority: JP2004-043145 20040219; JP2004-281395 20040928
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8246 ; H01L27/108 ; H01L27/115
Abstract:
In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface.
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