公开(公告)号：US20090057677A1

公开(公告)日：2009-03-05

申请号：US12193238

申请日：2008-08-18

申请人： Kazunori ISOGAI ,  Akihiro KAMADA

发明人： Kazunori ISOGAI ,  Akihiro KAMADA

IPC分类号： H01L29/04 ,  H01L21/28

CPC分类号： H01L29/045 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/91 ,  H01L29/7833

摘要： A method for fabricating a ferroelectric device includes Step S1 of forming a polycrystalline electrode on or above a substrate in which a MOS transistor is formed, Step S2 of performing metal organic chemical vapor deposition to form an amorphous film of bismuth titanate on the polycrystalline electrode, and Step S3 of performing annealing at a temperature in a predetermined range to make the amorphous film be a polycrystalline ferroelectric film made up of a large number of bismuth titanate having a layered perovskite structure. Step S3 includes a sub-step of increasing a temperature of the amorphous film to a lower limit of the predetermined temperature range at a temperature increase rate at which crystal nuclei are not grown.

摘要翻译： 铁电体元件的制造方法包括在形成有MOS晶体管的基板上形成多晶电极的工序S1，在多晶电极上进行金属有机化学气相沉积的步骤S2，形成钛酸铋非晶膜， 以及在预定范围内的温度下进行退火以使非晶膜为由具有层状钙钛矿结构的大量钛酸铋构成的多晶铁电体膜的步骤S3。 步骤S3包括以不生长晶核的升温速度将非晶膜的温度升高到规定温度范围的下限的子步骤。

公开(公告)号：US20050184328A1

公开(公告)日：2005-08-25

申请号：US11059451

申请日：2005-02-17

申请人： Kiyoshi Uchiyama ,  Shintarou Ida ,  Yasuhiro Shimada ,  Kazunori Isogai ,  Yoshihisa Kato

发明人： Kiyoshi Uchiyama ,  Shintarou Ida ,  Yasuhiro Shimada ,  Kazunori Isogai ,  Yoshihisa Kato

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/56

摘要： In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface.

摘要翻译： 在其中在半导体元件上形成含有金属氧化物的薄膜的半导体器件中，薄膜是由金属氧化物形成的晶体颗粒的聚集体，并且晶体颗粒在其表面的一部分彼此结合 。

公开(公告)号：US20060223251A1

公开(公告)日：2006-10-05

申请号：US11366822

申请日：2006-03-03

申请人： Kazunori Isogai

发明人： Kazunori Isogai

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L21/8234 ,  H01L29/40 ,  H01L21/336

CPC分类号： H01L27/0811 ,  H01L29/78391

摘要： A field effect transistor includes a silicon substrate, a source electrode and a drain electrode which are formed in upper portions of the silicon substrate, and an insulator film, a PCMO film, and a gate electrode which are formed on part of the silicon substrate sandwiched between the source electrode and the drain electrode. Data writing is performed by changing a voltage level of a write voltage applied to the PCMO film, and data reading is performed by applying a read voltage to the PCMO film and detecting a drain current.

公开(公告)号：US07592659B2

公开(公告)日：2009-09-22

申请号：US11366822

申请日：2006-03-03

申请人： Kazunori Isogai

发明人： Kazunori Isogai

IPC分类号： H01L27/108

CPC分类号： H01L27/0811 ,  H01L29/78391

摘要： A field effect transistor includes a silicon substrate, a source electrode and a drain electrode which are formed in upper portions of the silicon substrate, and an insulator film, a PCMO film, and a gate electrode which are formed on part of the silicon substrate sandwiched between the source electrode and the drain electrode. Data writing is performed by changing a voltage level of a write voltage applied to the PCMO film, and data reading is performed by applying a read voltage to the PCMO film and detecting a drain current.

摘要翻译： 场效应晶体管包括形成在硅衬底的上部的硅衬底，源电极和漏电极，以及形成在硅衬底的一部分上的绝缘膜，PCMO膜和栅电极，夹在 在源电极和漏电极之间。 通过改变施加到PCMO膜的写入电压的电压电平来执行数据写入，并且通过向PCMO膜施加读取电压并检测漏极电流来执行数据读取。

公开(公告)号：US20070090426A1

公开(公告)日：2007-04-26

申请号：US11493525

申请日：2006-07-27

申请人： Kazunori Isogai

发明人： Kazunori Isogai

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00 ,  H01L29/00 ,  H01L27/108 ,  H01L31/119

CPC分类号： H01L28/55 ,  C23C16/40 ,  H01L28/65

摘要： A ferroelectric capacitor includes a bottom electrode formed on a substrate, a ferroelectric material film formed on the bottom electrode and a top electrode formed on the ferroelectric material film. The ferroelectric material film is predominantly made of a compound represented by the general formula of SrxBiyTa2-zNbzO9 (wherein 0.69≦x≦0.81, 2.09≦y≦2.31 and z=0 or 0.35≦z≦0.98).

摘要翻译： 铁电电容器包括形成在基板上的底部电极，形成在底部电极上的铁电材料膜和形成在铁电体膜上的顶部电极。 铁电材料膜主要由以下通式表示的化合物制成：通式为Sr 1-x Nb 2 Si 2 z z Nb z 其中0.69 <= x <= 0.81,2.09 <= y = 2.31且z = 0或0.35 <= z <= 0.98）。