发明申请
- 专利标题： Semiconductor device and its manufacturing method
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11059451申请日： 2005-02-17
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公开(公告)号： US20050184328A1公开(公告)日： 2005-08-25
- 发明人: Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
- 申请人： Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2004-043145 20040219; JP2004-281395 20040928
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8246 ; H01L27/108 ; H01L27/115
摘要：
In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface.
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