发明申请
- 专利标题： Manufacturing method of a semiconductor device with a metal gate electrode and a structure thereof
- 专利标题（中）： 具有金属栅电极的半导体器件的制造方法及其结构
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申请号： US11055770申请日： 2005-02-11
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公开(公告)号： US20050186792A1公开(公告)日： 2005-08-25
- 发明人: Akira Takahashi
- 申请人： Akira Takahashi
- 优先权： JP044790/2004 20040220
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3065 ; H01L21/311 ; H01L21/336 ; H01L21/44 ; H01L21/60 ; H01L21/768 ; H01L21/8234 ; H01L29/78
摘要：
In a manufacturing method of a semiconductor device, a metallic gate electrode film, a protective film and an offset nitride film are formed on a semiconductor substrate to compose a stacked structure. An insulating film which covers the stacked structure is etched to expose the offset nitride film, and the exposed offset nitride film is etched to expose the protective film. The exposed protective film may be etched to expose the metallic gate electrode film under predetermined etching conditions. An etching rate of the protective film is greater than that of the metallic gate electrode film. The etching of the insulating film and the etching of the exposed offset nitride film may form a contact hole. Alternatively, a refractory metallic film may be formed on the exposed protective film in the contact hole, which is chemically reacted with the protective film to form a conductive film on the metallic gate electrode film. A conductive plug is formed in the contact hole.