Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 μs; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.