公开(公告)号：US20050189015A1

公开(公告)日：2005-09-01

申请号：US10977751

申请日：2004-10-29

申请人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

发明人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 μs; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.

摘要翻译： 公开了装置，太阳能电池结构及其制造方法。 简要描述，该装置的一个示例性实施例等等包括：共烧p型硅衬底，其中本体寿命为约20至125微米; 形成在p型硅衬底的顶侧上的n + + +层; 位于n + +层的顶侧的氮化硅抗反射（AR）层; 位于氮化硅AR层的部分上的多个Ag触点，其中Ag触点与n + +型发射极层电子连通; 位于p型硅衬底的相对侧的p硅衬底的背面上的均匀的Al背表面场（BSF或p + SUP）层， + 层; 以及位于Al BSF层的背侧上的Al接触层。 该装置具有约0.75至0.85的填充因子（FF），约600至650mV的开路电压（V SUB OC）和短路电流（J SUB SC） SUB>）为约28至36mA / cm 2。

公开(公告)号：US20100233840A1

公开(公告)日：2010-09-16

申请号：US12758571

申请日：2010-04-12

申请人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

发明人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

IPC分类号： H01L31/18 ,  F27B9/12

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 μs; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.

摘要翻译： 公开了装置，太阳能电池结构及其制造方法。 简要描述，该装置的一个示例性实施例包括：共烧p型硅衬底，其中体积寿命为约20至125μs; 形成在p型硅衬底的顶侧上的n +层; 位于n +层的顶侧的氮化硅抗反射（AR）层; 位于氮化硅AR层的部分上的多个Ag触点，其中Ag触点与n +型发射极层电子连通; 位于p型硅衬底的与n +层相反的相对侧上的p-硅衬底的背面上的均匀Al背表面场（BSF或p +）层; 以及位于Al BSF层的背面上的Al接触层。 该器件具有约0.75至0.85的填充因子（FF），约600至650mV的开路电压（VOC）和约28至36mA / cm 2的短路电流（JSC）。

公开(公告)号：US07790574B2

公开(公告)日：2010-09-07

申请号：US11301527

申请日：2005-12-13

申请人： Ajeet Rohatgi ,  Dong Seop Kim ,  Kenta Nakayashiki ,  Brian Rounsaville

发明人： Ajeet Rohatgi ,  Dong Seop Kim ,  Kenta Nakayashiki ,  Brian Rounsaville

IPC分类号： H01L21/00

CPC分类号： H01L21/2255 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

摘要翻译： 公开了包括在晶片中硼扩散的工艺，布置和装置的各种实施例。 在一个代表性实施例中，提供了一种方法，其中将硼氧化物溶液施加到晶片的表面。 此后，晶片经受与第一加热循环相关联的快速加热斜坡，其导致一定量的硼的释放以扩散到晶片中。

公开(公告)号：US20060183307A1

公开(公告)日：2006-08-17

申请号：US11301527

申请日：2005-12-13

申请人： Ajeet Rohatgi ,  Dong Kim ,  Kenta Nakayashiki ,  Brian Rounsaville

发明人： Ajeet Rohatgi ,  Dong Kim ,  Kenta Nakayashiki ,  Brian Rounsaville

IPC分类号： H01L21/22

CPC分类号： H01L21/2255 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

摘要翻译： 公开了包括在晶片中硼扩散的工艺，布置和装置的各种实施例。 在一个代表性实施例中，提供了一种方法，其中将硼氧化物溶液施加到晶片的表面。 此后，晶片经受与第一加热循环相关联的快速加热斜坡，其导致一定量的硼的释放以扩散到晶片中。

公开(公告)号：US09054237B2

公开(公告)日：2015-06-09

申请号：US12954299

申请日：2010-11-24

申请人： Kenta Nakayashiki ,  Baomin Xu

发明人： Kenta Nakayashiki ,  Baomin Xu

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/068

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

摘要翻译： 交叉反向接触（IBC）太阳能电池通过在衬底上沉积具有第一掺杂剂材料（例如，硼）的间隔开的平行焊盘来产生，加热衬底以将第一掺杂剂扩散到相应的第一（例如p +）扩散 并且在第一扩散区上形成扩散阻挡层（例如，硼硅酸盐玻璃），然后将衬底设置在含有第二掺杂剂（例如磷）的气氛中，使得第二掺杂剂通过衬底的暴露表面区域扩散形成 第一（p +）扩散区之间的第二（例如，n +）扩散区（扩散阻挡层防止第二掺杂剂扩散到第一（p +）扩散区）。 然后去除相邻的第一（p +）和第二（n +）扩散区之间的每个界面的衬底材料（例如，使用激光烧蚀），使得在相邻扩散区之间形成延伸到衬底中比扩散掺杂剂更深的细长槽 地区。

公开(公告)号：US20110070676A1

公开(公告)日：2011-03-24

申请号：US12954299

申请日：2010-11-24

申请人： Kenta Nakayashiki ,  Baomin Xu

发明人： Kenta Nakayashiki ,  Baomin Xu

IPC分类号： H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

摘要翻译： 交叉反向接触（IBC）太阳能电池通过在衬底上沉积具有第一掺杂剂材料（例如，硼）的间隔开的平行焊盘来产生，加热衬底以将第一掺杂剂扩散到相应的第一（例如p +）扩散 并且在第一扩散区上形成扩散阻挡层（例如，硼硅酸盐玻璃），然后将衬底设置在含有第二掺杂剂（例如磷）的气氛中，使得第二掺杂剂通过衬底的暴露表面区域扩散形成 第一（p +）扩散区之间的第二（例如，n +）扩散区（扩散阻挡层防止第二掺杂剂扩散到第一（p +）扩散区）。 然后去除相邻的第一（p +）和第二（n +）扩散区之间的每个界面的衬底材料（例如，使用激光烧蚀），使得在相邻扩散区之间形成延伸到衬底中比扩散掺杂剂更深的细长槽 地区。

公开(公告)号：US20110070681A1

公开(公告)日：2011-03-24

申请号：US12954234

申请日：2010-11-24

申请人： Kenta Nakayashiki ,  Baomin Xu

发明人： Kenta Nakayashiki ,  Baomin Xu

IPC分类号： H01L31/0352

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

摘要翻译： 交叉反向接触（IBC）太阳能电池通过在衬底上沉积具有第一掺杂剂材料（例如，硼）的间隔开的平行焊盘来产生，加热衬底以将第一掺杂剂扩散到相应的第一（例如p +）扩散 并且在第一扩散区上形成扩散阻挡层（例如，硼硅酸盐玻璃），然后将衬底设置在含有第二掺杂剂（例如磷）的气氛中，使得第二掺杂剂通过衬底的暴露表面区域扩散形成 第一（p +）扩散区之间的第二（例如，n +）扩散区（扩散阻挡层防止第二掺杂剂扩散到第一（p +）扩散区）。 然后去除相邻的第一（p +）和第二（n +）扩散区之间的每个界面的衬底材料（例如，使用激光烧蚀），使得在相邻扩散区之间形成延伸到衬底中比扩散掺杂剂更深的细长槽 地区。

公开(公告)号：US20100130014A1

公开(公告)日：2010-05-27

申请号：US12324571

申请日：2008-11-26

申请人： Kenta Nakayashiki ,  Baomin Xu ,  Scott A. Elrod

发明人： Kenta Nakayashiki ,  Baomin Xu ,  Scott A. Elrod

IPC分类号： H01L21/311

CPC分类号： H01L31/02363 ,  Y02E10/50

摘要： Techniques are disclosed for surface texturing multicrystalline silicon using drop jetting technology to form mask or etch patterns on a surface of a multicrystalline silicon substrate.

摘要翻译： 公开了用于使用液滴喷射技术在多晶硅衬底的表面上形成掩模或蚀刻图案的表面纹理化多晶硅的技术。

公开(公告)号：US20120129342A1

公开(公告)日：2012-05-24

申请号：US13365278

申请日：2012-02-03

申请人： Kenta Nakayashiki ,  David K. Fork ,  Scott E. Solberg

发明人： Kenta Nakayashiki ,  David K. Fork ,  Scott E. Solberg

IPC分类号： H01L21/28

CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

摘要： A method for fabricating a backside metallization structure on a semiconductor substrate including moving a printhead having at least one nozzle orifice relative to the semiconductor substrate, and feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate.

摘要翻译： 一种用于在半导体衬底上制造背面金属化结构的方法，包括移动具有相对于半导体衬底的至少一个喷嘴孔的打印头，以及通过所述打印头供给Al钝化层油墨和AgAl焊盘油墨，使得所述Al钝化 同时从所述至少一个喷嘴孔挤出所述AgAl焊盘油墨并将其沉积到半导体衬底上。

公开(公告)号：US20100139754A1

公开(公告)日：2010-06-10

申请号：US12331284

申请日：2008-12-09

申请人： Kenta Nakayashiki ,  David K. Fork ,  Scott E. Solberg

发明人： Kenta Nakayashiki ,  David K. Fork ,  Scott E. Solberg

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

摘要： A solar cell includes two backside metallization materials that are simultaneously extrusion deposited on a semiconductor substrate such that both a back surface field (BSF) metal layer (e.g., Al) and a solder pad metal structure (e.g., AgAl) are coplanar and non-overlapping, and the two metals abut each other to form a continuous metal layer that extends over the backside surface of the substrate. In one embodiment, the solder pad metal is formed directly on the backside surface of the substrate, either by co-extruding the two materials in the form of a continuous sheet, or by depositing spaced apart structures that are then flattened to contact each other by way of an air jet device. In another embodiment, the solder pad metal is disposed over a thin layer of the BSF metal (i.e., either disposed directly on the BSF metal, or disposed on an intervening barrier layer) using a co-extrusion head.

摘要翻译： 太阳能电池包括两个背面金属化材料，其同时挤出沉积在半导体衬底上，使得后表面场（BSF）金属层（例如，Al）和焊盘金属结构（例如，AgAl）都是共面和非平面的， 并且两个金属彼此邻接以形成在衬底的背面延伸的连续金属层。 在一个实施例中，焊盘金属直接形成在衬底的背面上，或者通过将两种材料以连续片材的形式共挤出，或者通过沉积间隔开的结构，然后被平坦化以相互接触，从而通过 喷气装置的方式。 在另一个实施例中，使用共挤出头将焊垫金属设置在BSF金属的薄层上（即，直接设置在BSF金属上，或者设置在中间阻挡层上）。