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    SOLAR CELL HAVING IMPROVED REAR CONTACT
    3.
    发明申请
    SOLAR CELL HAVING IMPROVED REAR CONTACT 审中-公开
    具有改进后接触的太阳能电池

    公开(公告)号：US20120145232A1

    公开(公告)日：2012-06-14

    申请号：US13091015

    申请日：2011-04-20

    申请人： Yu Kyung KIM ,  Dong Seop Kim

    发明人： Yu Kyung KIM ,  Dong Seop Kim

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/068 ,  H01L31/022425 ,  Y02E10/547

    摘要： Provided is a solar cell including: a semiconductive base layer having a first conductivity type; a semiconductive emitter layer disposed on top of the base layer and having a second conductivity type opposite to the first conductivity type; a front electrode disposed on top of the emitter layer; a passivation layer disposed under the base layer and including a contact hole exposing the base layer; and a rear electrode disposed under the passivation layer and connected with the base layer through the contact hole, wherein the rear electrode comprises a silicon (Si)-aluminum (Al) eutectic alloy powder.

    摘要翻译： 提供一种太阳能电池，包括：具有第一导电类型的半导体基底层; 设置在所述基底层的顶部并且具有与所述第一导电类型相反的第二导电类型的半导体发射极层; 设置在发射极层顶部的前电极; 钝化层，设置在所述基底层下方，并且包括暴露所述基底层的接触孔; 以及设置在所述钝化层下方并通过所述接触孔与所述基底层连接的后电极，其中所述后电极包括硅（Si） - 铝（Al）共晶合金粉末。

    SILICON SOLAR CELLS AND METHODS OF FABRICATION
    4.
    发明申请
    SILICON SOLAR CELLS AND METHODS OF FABRICATION 审中-公开
    硅太阳能电池和制造方法

    公开(公告)号：US20100233840A1

    公开(公告)日：2010-09-16

    申请号：US12758571

    申请日：2010-04-12

    申请人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

    发明人： Ajeet Rohatgi ,  Ji-Weon Jeong ,  Kenta Nakayashiki ,  Vijay Yelundur ,  Dong Seop Kim ,  Mohamed Hilali

    IPC分类号： H01L31/18 ,  F27B9/12

    CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 μs; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.

    摘要翻译： 公开了装置，太阳能电池结构及其制造方法。 简要描述，该装置的一个示例性实施例包括：共烧p型硅衬底，其中体积寿命为约20至125μs; 形成在p型硅衬底的顶侧上的n +层; 位于n +层的顶侧的氮化硅抗反射（AR）层; 位于氮化硅AR层的部分上的多个Ag触点，其中Ag触点与n +型发射极层电子连通; 位于p型硅衬底的与n +层相反的相对侧上的p-硅衬底的背面上的均匀Al背表面场（BSF或p +）层; 以及位于Al BSF层的背面上的Al接触层。 该器件具有约0.75至0.85的填充因子（FF），约600至650mV的开路电压（VOC）和约28至36mA / cm 2的短路电流（JSC）。

    Solar cell and method for fabricating the same
    5.
    发明授权
    Solar cell and method for fabricating the same 失效
    太阳能电池及其制造方法

    公开(公告)号：US06524880B2

    公开(公告)日：2003-02-25

    申请号：US09912061

    申请日：2001-07-25

    申请人： In-Sik Moon ,  Dong-Seop Kim ,  Soo-Hong Lee

    发明人： In-Sik Moon ,  Dong-Seop Kim ,  Soo-Hong Lee

    IPC分类号： H01L3104

    CPC分类号： H01L31/022425 ,  H01L31/18 ,  Y02E10/50

    摘要： A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n++ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.

    摘要翻译： 制造太阳能电池的技术包括首先形成在电池的前表面上的n +发射极区，然后在电池的两侧形成前后绝缘层。 P（磷）源和B（硼）源分别印刷在前后绝缘层上，然后两种掺杂剂在高温下扩散到电池中。 因此，形成电池前侧的n ++区域和电池背面的BSF（背面场）区域。 前后接触图案分别形成在前后绝缘层上。 在分别在前后绝缘层上形成前后接触后，露出n ++区域和BSF区域。 前后触点分别接触n ++区域和BSF区域。

    METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE
    7.
    发明申请
    METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
    制造光电器件的方法

    公开(公告)号：US20130095597A1

    公开(公告)日：2013-04-18

    申请号：US13568462

    申请日：2012-08-07

    申请人： Sang-Jin Park ,  Min-Chul Song ,  Sung-Chan Park ,  Dong-Seop Kim ,  Won-Gyun Kim ,  Sang-Won Seo

    发明人： Sang-Jin Park ,  Min-Chul Song ,  Sung-Chan Park ,  Dong-Seop Kim ,  Won-Gyun Kim ,  Sang-Won Seo

    IPC分类号： H01L31/0232 ,  H01L31/0248

    CPC分类号： H01L31/1804 ,  H01L21/223 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/268 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.

    摘要翻译： 一种制造太阳能电池的方法，包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺，并且包括在所述第一掺杂材料层上形成第二掺杂材料层，其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板，第一掺杂材料层和第二掺杂材料层的部分，以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极，在所述基板的与所述第一表面相对的第二表面上形成第二电极。

    Self-biased solar cell and module adopting the same
    10.
    发明授权
    Self-biased solar cell and module adopting the same 失效
    自偏置太阳能电池和模块采用相同

    公开(公告)号：US6081017A

    公开(公告)日：2000-06-27

    申请号：US84881

    申请日：1998-05-28

    申请人： Dong-seop Kim ,  Il-whan Ji ,  Soo-hong Lee

    发明人： Dong-seop Kim ,  Il-whan Ji ,  Soo-hong Lee

    IPC分类号： H01L31/0224 ,  H01L31/048 ,  H01L31/068 ,  H01L31/00 ,  H01L31/06

    CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/0445 ,  H01L31/048 ,  Y02E10/547

    摘要： A self-biased solar cell and a module adopting the solar cell. The self-biased solar cell includes a semiconductor substrate of first conductivity type, a semiconductor layer of second conductivity type disposed adjacent to the first surface of the semiconductor substrate, at least one more first electrodes formed adjacent to the semiconductor layer; at least one more dielectric layers formed on the second surface of the semiconductor substrate, at least one or more second electodes formed on the second surface of the semiconductor substrate, the second electodes being disposed adjacent to the dielectric layers, and at least one or more voltage applying electrode formed on the dielectric layers. Therefore, recombination loss of the carriers according to the formation of a back surface field is comparatively decreased, and open voltage and quantum efficiency at a long wavelength are increased.

    摘要翻译： 自偏置太阳能电池和采用太阳能电池的模块。 所述自偏压太阳能电池包括第一导电类型的半导体衬底，与所述半导体衬底的所述第一表面相邻设置的第二导电类型的半导体层，与所述半导体层相邻形成的至少一个以上的第一电极; 形成在所述半导体衬底的第二表面上的至少一个以上的电介质层，形成在所述半导体衬底的第二表面上的至少一个或多个第二电极，所述第二电极邻近所述电介质层设置，以及至少一个或多个 形成在电介质层上的施加电压的电极。 因此，根据背面场的形成，载流子的复合损失相对降低，并且长波长的开路电压和量子效率增加。