发明申请
- 专利标题： Method and apparatus for electroplating a semiconductor wafer
- 专利标题（中）： 用于电镀半导体晶片的方法和装置
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申请号： US11114312申请日： 2005-04-25
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公开(公告)号： US20050189229A1公开(公告)日： 2005-09-01
- 发明人: James Powers
- 申请人： James Powers
- 主分类号： C25D7/12
- IPC分类号： C25D7/12 ; C25D11/32 ; C25D17/10 ; C25D17/12 ; H01L21/288
摘要：
A method, apparatus and anode for plating copper or other metals onto a barrier or seed layer of a wafer surface is described. A copper layer of uniform thickness is plated on the surface by, for instance, maintaining a constant current density between the anode and wafer surface. Several configurations of anodes are described for obtaining the constant current density.
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