发明申请
- 专利标题： Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
- 专利标题（中）： 通过机械方式回收利用包括多层结构在内的薄片的薄片
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申请号： US11075272申请日： 2005-03-07
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公开(公告)号： US20050189323A1公开(公告)日： 2005-09-01
- 发明人: Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Takeshi Akatsu , Bruce Faure
- 申请人： Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Takeshi Akatsu , Bruce Faure
- 优先权： FR0300098 20030107
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; H01L21/302 ; H01L21/762
摘要：
The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
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