公开(公告)号：US08912081B2

公开(公告)日：2014-12-16

申请号：US13055123

申请日：2009-07-02

申请人： Bruce Faure

发明人： Bruce Faure

IPC分类号： H01L21/20 ,  H01L29/20 ,  H01L21/02 ,  H01L21/84

CPC分类号： H01L21/02488 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/84

摘要： The present invention relates to a method for relaxing a strained material layer by providing a strained material layer and a low-viscosity layer formed on a first face of the strained material layer; forming a stiffening layer on at least one part of a second face of the strained material layer opposite to the first face thereby forming a multilayer stack; and subjecting the multilayer stack to a heat treatment thereby at least partially relaxing the strained material layer.

摘要翻译： 本发明涉及通过提供应变材料层和形成在应变材料层的第一面上的低粘度层来松弛应变材料层的方法; 在所述应变材料层的与所述第一面相对的第二面的至少一部分上形成加强层，从而形成多层叠层; 并对多层叠层进行热处理，从而至少部分地松弛应变材料层。

公开(公告)号：US08105916B2

公开(公告)日：2012-01-31

申请号：US12463873

申请日：2009-05-11

申请人： Bruce Faure

发明人： Bruce Faure

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/76251

摘要： The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed by a heat treatment at a relaxation temperature at which the material constituting the thin film deforms by elastic deformation is deposited on the thin film; c) the thin film and the relaxation layer are transferred onto a substrate; and d) a thermal budget is applied at least the relaxation temperature, so as to cause the plastic deformation of the relaxation layer and the at least partial relaxation of the thin film by elastic deformation, and thus to obtain the final heterostructure.

摘要翻译： 本发明涉及一种用于制造异质结构的方法。 该方法值得注意的是它包括以下步骤：a）将应变结晶薄膜沉积在或转移到中间基底上; b）通过在薄膜上构成薄膜的材料变形的松弛温度下进行热处理而能够被塑性变形的结晶材料制成的应变松弛层沉积在薄膜上; c）将薄膜和松弛层转移到基底上; 以及d）至少施加热预算以使松弛层发生塑性变形，并且通过弹性变形使薄膜至少部分松弛，从而获得最终的异质结构。

公开(公告)号：US20100012947A1

公开(公告)日：2010-01-21

申请号：US12310345

申请日：2007-11-11

申请人： Bruce Faure

发明人： Bruce Faure

IPC分类号： H01L29/201 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634

摘要： The invention relates to a process for making a GaN substrate (60), characterized in that it comprises the following steps: (a) transferring a first monocrystal GaN layer (50) onto a supporting substrate (40); (b) applying crystal growth for a second monocrystal GaN layer on the first layer (50); the first and second GaN layers thereby forming together said GaN substrate (60), said GaN substrate (60) having a thickness of at least 10 micrometers, (c) removing at least one portion of the supporting substrate (40).

摘要翻译： 本发明涉及一种制造GaN衬底（60）的方法，其特征在于包括以下步骤：（a）将第一单晶GaN层（50）转移到支撑衬底（40）上; （b）在第一层（50）上施加用于第二单晶GaN层的晶体生长; 所述第一和第二GaN层由此形成所述GaN衬底（60），所述GaN衬底（60）具有至少10微米的厚度，（c）去除所述支撑衬底（40）的至少一部分。

公开(公告)号：US07375008B2

公开(公告)日：2008-05-20

申请号：US11075272

申请日：2005-03-07

申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.

摘要翻译： 本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。 施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。 该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。 通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

公开(公告)号：US20070287273A1

公开(公告)日：2007-12-13

申请号：US11840696

申请日：2007-08-17

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07288430B2

公开(公告)日：2007-10-30

申请号：US11165895

申请日：2005-06-24

申请人： Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

发明人： Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

IPC分类号： H01L21/00

CPC分类号： C30B25/183 ,  C30B33/00 ,  H01L21/76254

摘要： An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.

摘要翻译： 制造具有光滑表面的高品质异质外延微结构的有效方法。 该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。 还包括由这种方法制造的异质外延微结构。

公开(公告)号：US20050189323A1

公开(公告)日：2005-09-01

申请号：US11075272

申请日：2005-03-07

申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benedite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.

摘要翻译： 本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。 施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。 该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。 通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

公开(公告)号：US20120100691A1

公开(公告)日：2012-04-26

申请号：US13341462

申请日：2011-12-30

申请人： Bruce Faure

发明人： Bruce Faure

IPC分类号： H01L21/762 ,  H01L21/26

CPC分类号： H01L21/76251

摘要： The invention relates to a process for fabricating a heterostructure. This process comprises heating an intermediate heterostructure. The intermediate heterostructure comprises a crystalline strain relaxation layer interposed directly between a first substrate and a strained layer of crystalline semiconductor material. The process further comprises causing plastic deformation of the crystalline strain relaxation layer and elastic deformation of the strained layer of crystalline semiconductor material to at least partially relax the strained layer of crystalline semiconductor material.

摘要翻译： 本发明涉及一种用于制造异质结构的方法。 该方法包括加热中间异质结构。 中间异质结构包括直接插在第一衬底和晶体半导体材料的应变层之间的晶体应变松弛层。 该方法还包括引起结晶应变松弛层的塑性变形和晶体半导体材料的应变层的弹性变形以至少部分地松弛晶体半导体材料的应变层。

公开(公告)号：US20120098033A1

公开(公告)日：2012-04-26

申请号：US13341489

申请日：2011-12-30

申请人： Bruce Faure

发明人： Bruce Faure

IPC分类号： H01L29/04

CPC分类号： H01L21/76251

摘要： The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed by a heat treatment at a relaxation temperature at which the material constituting the thin film deforms by elastic deformation is deposited on the thin film; c) the thin film and the relaxation layer are transferred onto a substrate; and d) a thermal budget is applied at at least the relaxation temperature, so as to cause the plastic deformation of the relaxation layer and the at least partial relaxation of the thin film by elastic deformation, and thus to obtain the final heterostructure.

摘要翻译： 本发明涉及一种用于制造异质结构的方法。 该方法值得注意的是它包括以下步骤：a）将应变结晶薄膜沉积在或转移到中间基底上; b）通过在薄膜上构成薄膜的材料变形的松弛温度下进行热处理而能够被塑性变形的结晶材料制成的应变松弛层沉积在薄膜上; c）将薄膜和松弛层转移到基底上; 以及d）至少在松弛温度下施加热预算，以使松弛层发生塑性变形，并通过弹性变形使薄膜至少部分松弛，从而获得最终的异质结构。

公开(公告)号：US08093138B2

公开(公告)日：2012-01-10

申请号：US12469285

申请日：2009-05-20

申请人： Bruce Faure ,  Lea Di Cioccio

发明人： Bruce Faure ,  Lea Di Cioccio

IPC分类号： H01L21/30 ,  H01L21/301

CPC分类号： C30B25/18 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  Y10S438/928 ,  Y10S438/977

摘要： A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; bonding the epitaxially grown layer to an acceptor substrate before detaching the remainder portion from the support portion; and detaching the remainder portion from the support portion at the region of weakness. The epitaxially grown layer may be removed from the support portion as a free-standing structure.

摘要翻译： 通过在支撑衬底中形成弱化区域形成外延生长层的方法，以限定弱区的相对侧上的支撑部分和剩余部分，在形成区域之后在支撑部分上外延生长外延生长层 的弱点，但在支撑部分与其余部分分离之前; 在将剩余部分从支撑部分分离之前，将外延生长层结合到受主基板上; 并且在所述弱化区域将所述剩余部分从所述支撑部分分离。 外延生长层可以作为独立结构从支撑部分去除。