发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11048732申请日： 2005-02-03
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公开(公告)号： US20050189603A1公开(公告)日： 2005-09-01
- 发明人: Masashi Inao , Hiroki Matsunaga
- 申请人： Masashi Inao , Hiroki Matsunaga
- 申请人地址： JP Kadoma-shi
- 专利权人： Matsushita Elec. Ind. Co. Ltd.
- 当前专利权人： Matsushita Elec. Ind. Co. Ltd.
- 当前专利权人地址： JP Kadoma-shi
- 优先权： JP2004-027419 20040204; JP2005-001038 20050106
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; G05F3/30 ; G09F9/313 ; H01J17/49 ; H01L21/822 ; H01L21/8222 ; H01L21/8234 ; H01L21/8248 ; H01L21/8249 ; H01L23/58 ; H01L27/04 ; H01L27/06 ; H01L29/06 ; H01L29/73 ; H01L29/732
摘要：
A band gap circuit using NPN transistors (10, 12) having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors (10, 12) and semiconductor elements constituting other signal processing circuits are integrated in the same floating block (19) with high voltage resistance. As a result, a reference voltage circuit used in the signal processing circuit can be integrated in a compact manner.
公开/授权文献
- US07129779B2 Semiconductor device with floating block 公开/授权日：2006-10-31
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