Invention Application
US20050194619A1 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same
有权
SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法
- Patent Title: SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same
- Patent Title (中): SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法
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Application No.: US11040778Application Date: 2005-01-21
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Publication No.: US20050194619A1Publication Date: 2005-09-08
- Inventor: Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Robert Miller , Deborah Neumayer , Son Nguyen
- Applicant: Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Robert Miller , Deborah Neumayer , Son Nguyen
- Applicant Address: US NY ARMONK
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY ARMONK
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L31/103
Abstract:
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.
Public/Granted literature
- US07892648B2 SiCOH dielectric material with improved toughness and improved Si-C bonding Public/Granted day:2011-02-22
Information query
IPC分类:
