发明申请
- 专利标题: High-temperature memory systems
- 专利标题(中): 高温记忆体系
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申请号: US10991705申请日: 2004-11-18
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公开(公告)号: US20050195627A1公开(公告)日: 2005-09-08
- 发明人: Chriswell Hutchens , Roger Schultz , Chia-Ming Liu , James Freeman
- 申请人: Chriswell Hutchens , Roger Schultz , Chia-Ming Liu , James Freeman
- 主分类号: G11C19/08
- IPC分类号: G11C19/08 ; H01L20060101 ; H03K17/615
摘要:
Memory system for storing one or more bits, systems including memory systems, and method for fabricating memory systems are disclosed. The memory system includes a substrate comprising sapphire or diamond, a magnetic random access memory (MRAM) array disposed on the substrate, and a memory controller disposed on the substrate and in communication with the MRAM array.
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