发明申请
US20050196534A1 CVD method using metal carbonyl gas and computer storage medium storing program for controlling same
有权
使用金属羰基气体的CVD法和计算机存储介质存储程序进行控制
- 专利标题: CVD method using metal carbonyl gas and computer storage medium storing program for controlling same
- 专利标题(中): 使用金属羰基气体的CVD法和计算机存储介质存储程序进行控制
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申请号: US11119906申请日: 2005-05-03
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公开(公告)号: US20050196534A1公开(公告)日: 2005-09-08
- 发明人: Tatsuo Hatano , Hideaki Yamasaki
- 申请人: Tatsuo Hatano , Hideaki Yamasaki
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2002-322924 20021106
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C16/16 ; C23C16/44
摘要:
A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.