发明申请
- 专利标题： Method of forming capacitor over bitline contact
- 专利标题（中）： 通过位线接触形成电容器的方法
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申请号： US11033447申请日： 2005-01-12
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公开(公告)号： US20050196921A1公开(公告)日： 2005-09-08
- 发明人: Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
- 申请人： Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
- 优先权： KR2004-1966 20040112
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3205 ; H01L21/4763 ; H01L21/8242
摘要：
A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact is connected to the second pad. A bit line electrically insulated from the storage node contact by a spacer and electrically connected to the first pad.
公开/授权文献
- US07109080B2 Method of forming capacitor over bitline contact 公开/授权日：2006-09-19
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