An aspect of the present invention provides a semiconductor device that includes a semiconductor base made of a first semiconductor material of a first conductivity type, a hetero-semiconductor region forming a heterojunction with the semiconductor base and made of a second semiconductor material having a different band gap from the first semiconductor material, a first gate electrode arranged in the vicinity of the heterojunction, a first gate insulating film configured to insulate the first gate electrode from the semiconductor base, a source electrode formed in contact with the hetero-semiconductor region, a dram electrode formed in contact with the semiconductor base, and an electric field extending region partly facing the first gate electrode, the first gate insulating film and hetero-semiconductor region interposed between the electric field extending region and the first gate electrode, the electric field extending region extending a built-in electric field into the hetero-semiconductor region.