发明申请
- 专利标题： Semiconductor integrated circuit and method for manufacturing the same
- 专利标题（中）： 半导体集成电路及其制造方法
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申请号： US11067699申请日： 2005-03-01
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公开(公告)号： US20050199919A1公开(公告)日： 2005-09-15
- 发明人: Yongxun Liu , Toshihiro Sekigawa , Meishoku Masahara , Kenichi Ishii , Eiichi Suzuki
- 申请人： Yongxun Liu , Toshihiro Sekigawa , Meishoku Masahara , Kenichi Ishii , Eiichi Suzuki
- 专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 优先权： JPP.2004-058110 20040302
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L21/02 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L21/84 ; H01L27/00 ; H01L27/088 ; H01L27/092 ; H01L27/12 ; H01L29/423 ; H01L29/76 ; H01L29/786
摘要：
Upstanding thin-film channel regions 5 having different heights are formed between source regions 7 and drain regions 8 of MOS transistors, respectively.
公开/授权文献
- US07382020B2 Semiconductor integrated circuit 公开/授权日：2008-06-03
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