- 专利标题： Magnetic random access memory
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申请号： US10847384申请日： 2004-05-18
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公开(公告)号： US20050199925A1公开(公告)日： 2005-09-15
- 发明人: Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
- 申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
- 优先权： JP2004-071390 20040312
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11B5/33 ; G11C11/14 ; G11C11/16 ; H01L21/8246 ; H01L27/22 ; H01L43/08 ; H01L43/12
摘要：
A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
公开/授权文献
- US06984865B2 Magnetic random access memory 公开/授权日：2006-01-10
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