发明申请
US20050199935A1 Mixed noble metal/noble metal oxide bottom electrode for enhanced PGO c-axis nucleation and growth
有权
用于增强PGO c轴成核和生长的混合贵金属/贵金属氧化物底电极
- 专利标题： Mixed noble metal/noble metal oxide bottom electrode for enhanced PGO c-axis nucleation and growth
- 专利标题（中）： 用于增强PGO c轴成核和生长的混合贵金属/贵金属氧化物底电极
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申请号： US10801375申请日： 2004-03-15
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公开(公告)号： US20050199935A1公开(公告)日： 2005-09-15
- 发明人: Fengyan Zhang , Sheng Hsu
- 申请人： Fengyan Zhang , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L27/108
摘要：
A method is provided for forming a single-phase c-axis PGO film overlying a Pt metal electrode. Although the method is summarized in the context of a Pt bottom electrode, it has a broader application to other noble metals. The method comprises: forming a bottom electrode mixture of Pt and Pt3O4; forming a single-phase c-axis PGO thin film overlying the bottom electrode; and, forming a top electrode overlying the PGO thin film. Forming a bottom electrode mixture of a Pt and Pt3O4 includes: forming a Pt first layer; and, forming a second layer, interposed between the first layer and the PGO thin film, of fully oxidized Pt3O4. In other aspects, forming a bottom electrode mixture of Pt and Pt3O4 includes forming a polycrystalline mixture of Pt and Pt3O4. A c-axis PGO film capacitor is also provided. Again, a Pt bottom electrode is described, along with other noble metal bottom electrodes.
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