- 专利标题： Tri-gate devices and methods of fabrication
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申请号： US10923472申请日： 2004-08-20
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公开(公告)号： US20050199949A1公开(公告)日： 2005-09-15
- 发明人: Robert Chau , Brian Dovle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
- 申请人： Robert Chau , Brian Dovle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/423 ; H01L29/786 ; H01L21/00 ; H01L29/76
摘要：
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
公开/授权文献
- US07005366B2 Tri-gate devices and methods of fabrication 公开/授权日：2006-02-28
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