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    Methods for nanoscale structures from optical lithography and subsequent lateral growth
    3.
    发明申请
    Methods for nanoscale structures from optical lithography and subsequent lateral growth 审中-公开
    从光刻和后续横向生长的纳米结构的方法

    公开(公告)号：US20070029643A1

    公开(公告)日：2007-02-08

    申请号：US10550178

    申请日：2004-03-22

    申请人： Mark Johnson ,  Douglas Barlage ,  John Muth

    发明人： Mark Johnson ,  Douglas Barlage ,  John Muth

    IPC分类号： H01L23/58

    CPC分类号： B81C1/00111 ,  B81C1/00619 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/28587 ,  H01L29/66318 ,  H01L29/66462

    摘要： Methods, and structures formed thereby, are disclosed for forming laterally grown structures with nanoscale dimensions from nanoscale arrays which can be patterned from nanoscale lithography. The structures and methods disclosed herein have applications with electronic, photonic, molecular electronic, spintronic, microfluidic or nano-mechanical (NEMS) technologies. The spacing between laterally grown structures can be a nanoscale measurement, for example with a spacing distance which can be approximately 1-50 nm, and more particularly can be from approximately 3-5 nm. This spacing is appropriate for integration of molecular electronic devices. The pitch between posts can be less than the average distance characteristic between dislocation defects for example in GaN (ρ=1010/cm2→d=0.1 μm) resulting an overall reduction in defect density. Large-scale integration of nanoscale devices can be achieved using lithographic equipment that is orders of magnitude less expensive that that used for advanced lithographic techniques, such as electron beam lithography.

    摘要翻译： 公开了由此形成的方法和结构，用于从纳米尺度阵列形成具有纳米级尺寸的横向生长结构，其可以从纳米级光刻图案化。 本文公开的结构和方法具有电子，光子，分子电子，自旋电子，微流体或纳米机械（NEMS）技术的应用。 横向生长的结构之间的间隔可以是纳米尺度的测量，例如具有大约1-50nm的间隔距离，更特别地可以是大约3-5nm。 该间隔适用于分子电子器件的集成。 柱之间的间距可以小于例如在GaN中的位错缺陷之间的平均距离特性（r 10 = 10/10 / cm 2→d =0.1μm），得到 总体减少缺陷密度。 可以使用光刻设备实现纳米尺度器件的大规模集成，这些设备比用于高级光刻技术（例如电子束光刻）的成本要低一个数量级。

    Method and systems for single- or multi-period edge definition lithography
    7.
    发明申请
    Method and systems for single- or multi-period edge definition lithography 审中-公开
    用于单周期或多周期边缘定义光刻的方法和系统

    公开(公告)号：US20060276043A1

    公开(公告)日：2006-12-07

    申请号：US10550040

    申请日：2004-03-22

    申请人： Mark Johnson ,  Douglas Barlage

    发明人： Mark Johnson ,  Douglas Barlage

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3086 ,  B82Y10/00 ,  H01L21/3088 ,  H01L29/66318 ,  H01L29/66856 ,  H01L29/66924

    摘要： Methods and systems for multiperiod, edge definition lithography are disclosed. According to one method, a first material is isotropically deposited on a substrate and on a field mesa also located on the substrate. The first masking material is then anisotropically removed from the substrate to leave a nanometer-pitched sidewall adjacent to the field mesa. A second masking material is then isotropically deposited on the substrate, the sidewall, and the field mesa. The second masking material is then anisotropically removed from the substrate to leave a second nanometer-pitched sidewall adjacent to the first sidewall. The process may be repeated to create alternating nanometer-pitched sidewalls of the first and second masking materials. One of the first and second masking materials may then be etched from the substrate to leave nanometer-pitched channels in one of the masking materials. The channels may be used to etch nanometer-pitched features in the substrate.

    摘要翻译： 公开了用于多周期，边缘清晰度光刻的方法和系统。 根据一种方法，第一材料被各向同性地沉积在基底上以及也位于基底上的场台面上。 然后将第一掩模材料从基底各向异性地移除，以留下与场台面相邻的纳米级的侧壁。 然后将第二掩蔽材料各向同性地沉积在基底，侧壁和场台面上。 然后将第二掩模材料从基板各向异性地移除以留下与第一侧壁相邻的第二纳米级的侧壁。 可以重复该过程以产生第一和第二掩蔽材料的交替的纳米级侧壁。 然后可以从衬底蚀刻第一和第二掩模材料中的一个，以在掩模材料之一中留下纳米间距的通道。 通道可以用于蚀刻衬底中的纳米级的特征。