发明申请
- 专利标题: Solid state imaging device and manufacturing method thereof
- 专利标题(中): 固态成像装置及其制造方法
-
申请号: US11074863申请日: 2005-03-09
-
公开(公告)号: US20050200711A1公开(公告)日: 2005-09-15
- 发明人: Ryu Shimizu , Kazuhiro Sasada , Masahiro Oda
- 申请人: Ryu Shimizu , Kazuhiro Sasada , Masahiro Oda
- 专利权人: Sanyo Electronic Co., Ltd.
- 当前专利权人: Sanyo Electronic Co., Ltd.
- 优先权: JP2004-066025 20040309; JP2004-308461 20041022
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H04N5/225
摘要:
A solid state imaging device includes photoelectric conversion portions for performing photoelectric conversion, and transfer portions for transferring signal charge occurring at the photoelectric conversion portions. Each transfer portion includes a transfer electrode formed of polysilicon film or the like, and an insulating coating film formed of a material such as a silicon nitride film and so forth, which has a higher relative dielectric constant than that of the silicon oxide, for coating the bottom face, the upper face, and both side faces, of the transfer electrode. The silicon nitride film is formed with a film thickness which is greater than 0 nm and smaller than 60 nm, on both sides of the transfer electrode.