发明申请
- 专利标题: Nonvolatile memory apparatus
- 专利标题(中): 非易失存储器
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申请号: US11076563申请日: 2005-03-10
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公开(公告)号: US20050201177A1公开(公告)日: 2005-09-15
- 发明人: Atsushi Shiraishi , Atsushi Shikata , Yasuhiro Nakamura , Makoto Obata
- 申请人: Atsushi Shiraishi , Atsushi Shikata , Yasuhiro Nakamura , Makoto Obata
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 优先权: JP2004-070133 20040312
- 主分类号: G06F12/16
- IPC分类号: G06F12/16 ; G06F3/06 ; G06F3/08 ; G11C5/00 ; G11C16/06
摘要:
The present invention is directed to suppress data loss caused by power shut-down during a rewriting process and to shorten time required to make a depletion check. A nonvolatile memory apparatus includes a rewritable nonvolatile memory and a card controller. The nonvolatile memory has a physical address area corresponding to a logical address and a save area. In response to a data rewrite instruction on a required logical address, the card controller stores data in a predetermined physical address area corresponding to the logical address to the save area and rewrites the data stored in the physical address area. When rewriting of the physical address area is incomplete, the card controller rewrites the data in the physical address area with the data stored in the save area. Thus, data loss caused by the power shut-down can be suppressed by data backup, and it is sufficient to make the depletion check in two places of the save area and the physical address area.