发明申请
US20050202639A1 Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
审中-公开
包括具有均匀分布的硅纳米点的栅极的存储器件的方法
- 专利标题： Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
- 专利标题（中）： 包括具有均匀分布的硅纳米点的栅极的存储器件的方法
-
申请号： US11071192申请日： 2005-03-04
-
公开(公告)号： US20050202639A1公开(公告)日： 2005-09-15
- 发明人: In-kyeong Yoo , Soo-hwan Jeong , Won-il Ryu
- 申请人： In-kyeong Yoo , Soo-hwan Jeong , Won-il Ryu
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2004-0014594 20040304
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/28 ; H01L21/335 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L29/792 ; H01L21/336
摘要：
Provided is a method of manufacturing a memory device that comprises a gate including uniformly distributed silicon nano dots. The method includes forming a gate on a substrate, the gate including, stacked in sequence an insulating film, nano dot layers separated by a predetermined lateral distance, and a conductive film pattern, forming a source region and a drain region contacting the gate in the substrate, and forming first and second metal layers on the source region and the drain region, respectively.