发明申请
- 专利标题: Gallium-containing light-emitting semiconductor device and method of fabrication
- 专利标题(中): 含镓的发光半导体器件及其制造方法
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申请号: US11135236申请日: 2005-05-23
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公开(公告)号: US20050205886A1公开(公告)日: 2005-09-22
- 发明人: Hitoshi Murofushi , Shiro Takeda
- 申请人: Hitoshi Murofushi , Shiro Takeda
- 申请人地址: JP Niiza-shi
- 专利权人: Sanken Electric Co., Ltd.
- 当前专利权人: Sanken Electric Co., Ltd.
- 当前专利权人地址: JP Niiza-shi
- 优先权: JP2002-348416 20021129
- 主分类号: H01L21/18
- IPC分类号: H01L21/18 ; H01L21/22 ; H01L29/22 ; H01L33/00 ; H01L33/20 ; H01L33/38 ; H01L33/40
摘要:
An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.
公开/授权文献
- US2143366A Serrated wave form generator 公开/授权日:1939-01-10
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