发明申请
- 专利标题： METAL GATE WITH COMPOSITE FILM STACK
- 专利标题（中）： 金属门与复合膜片
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申请号： US10708708申请日： 2004-03-19
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公开(公告)号： US20050205942A1公开(公告)日： 2005-09-22
- 发明人: Shian-Jyh Lin , Chung-Yuan Lee , Yu-Chang LIN
- 申请人： Shian-Jyh Lin , Chung-Yuan Lee , Yu-Chang LIN
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/49 ; H01L29/76 ; H01L29/78 ; H01L29/94 ; H01L31/062
摘要：
A novel metal gate structure includes a gate oxide layer formed on a surface of a silicon substrate, a doped silicon layer stacked on the gate oxide layer, a CVD ultra-thin titanium nitride film deposited on the doped silicon layer, a tungsten nitride layer stacked on the CVD ultra-thin titanium nitride film, a tungsten layer stacked on the tungsten nitride layer, and a nitride cap layer stacked on the tungsten layer. A liquid phase deposition (LPD) oxide spacer is formed on each sidewall of the metal gate stack. A silicon nitride spacer is formed on the LPD oxide spacer. The thickness of the CVD ultra-thin titanium nitride film is between 10 and 100 angstroms.
公开/授权文献
- US07030431B2 Metal gate with composite film stack 公开/授权日：2006-04-18