- 专利标题： Semiconductor device and method of manufacturing the same
-
申请号： US11119439申请日： 2005-04-29
-
公开(公告)号： US20050206014A1公开(公告)日： 2005-09-22
- 发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi , Takeshi Nakamura
- 申请人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi , Takeshi Nakamura
- 专利权人： Sanyo Electric Co., Ltd., a Osaka, Japan corporation
- 当前专利权人： Sanyo Electric Co., Ltd., a Osaka, Japan corporation
- 优先权： JPP.2000-269467 20000906
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L23/31 ; H01L23/48 ; H01L23/495
摘要：
As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.