发明申请
- 专利标题： FERRO-ELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 电动记忆体装置及其制造方法
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申请号： US10858441申请日： 2004-06-02
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公开(公告)号： US20050207202A1公开(公告)日： 2005-09-22
- 发明人: Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
- 申请人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
- 优先权： JP2004-077713 20040318
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; G11C11/14 ; G11C11/22 ; H01L21/8246 ; H01L27/105
摘要：
A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
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