发明申请
- 专利标题: Trench power MOSFET fabrication using inside/outside spacers
- 专利标题(中): 沟槽功率MOSFET制造使用内/外隔板
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申请号: US11054451申请日: 2005-02-09
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公开(公告)号: US20050208724A1公开(公告)日: 2005-09-22
- 发明人: Jianjun Cao , Paul Harvey , David Kent , Robert Montgomery , Kyle Spring
- 申请人: Jianjun Cao , Paul Harvey , David Kent , Robert Montgomery , Kyle Spring
- 专利权人: International Rectifier Corp.
- 当前专利权人: International Rectifier Corp.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8242 ; H01L29/45 ; H01L29/49 ; H01L29/78
摘要:
A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.