发明申请
- 专利标题: VERTICAL DEVICE WITH OPTIMAL TRENCH SHAPE
- 专利标题(中): 具有最佳TRENCH形状的垂直装置
-
申请号: US10708861申请日: 2004-03-29
-
公开(公告)号: US20050212027A1公开(公告)日: 2005-09-29
- 发明人: Thomas Adam , David Ahlgren , Kangguo Cheng , Ramachandra Divakaruni
- 申请人: Thomas Adam , David Ahlgren , Kangguo Cheng , Ramachandra Divakaruni
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/8242 ; H01L27/108 ; H01L29/94
摘要:
A method of forming a trench in a semiconductor substrate includes a step of converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to alignment errors between the trench lithography and the active area lithography is reduced. Applications include a vertical transistor that becomes insensitive to misalignment between the trench and the litho for the active area, in particular a DRAM cell with a vertical transistor.
公开/授权文献
- US07129129B2 Vertical device with optimal trench shape 公开/授权日:2006-10-31