发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US11059651申请日： 2005-02-17
-
公开(公告)号： US20050212082A1公开(公告)日： 2005-09-29
- 发明人: Kenichi Takeda , Tsuyoshi Fujiwara , Toshinori Imai , Tsuyoshi Ishikawa , Toshiyuki Mine , Makoto Miura
- 申请人： Kenichi Takeda , Tsuyoshi Fujiwara , Toshinori Imai , Tsuyoshi Ishikawa , Toshiyuki Mine , Makoto Miura
- 优先权： JP2004-091207 20040326
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/768 ; H01L27/108
摘要：
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.
公开/授权文献
信息查询
IPC分类:
